Quantum Mechanical Aspects of Transport in Nanoelectronics
نویسنده
چکیده
Innovations in semiconductor technology have provided us with an opportunity to examine devices with vertical and lateral dimensions less than 100 nm-comparable to the wavelength of the electron at the Fermi energy. At low temperature, the confinement and the coherence of the electronic motion on the scale of the electron wavelength give rise to gross deviations from classical charge transport that describes the resistance found in large conventional devices. For example, the low temperature electrical resistance of a high mobility, semiconducting wire 100-nm wide, IO-nm thick, and 200-nm long is nonlinear; it does not scale with length; it can be quantized as a function of the width and charge, it depends on the configuration used to measure it; and it is nonlocal, i.e., the current at one point in the wire depends not only on the electric field at that point, but on electric fields micrometers away. These peculiarities are due to the wave nature of the electron. In this paper w e discuss some of the implications quantum mechanics has on the performance of nanometer-scale devices.
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